M3SW-250DRA-D+技术参数

制造厂商：Mini-Circuits
类别封装：MMIC芯片 Switches, Die, SPDT 50 Ohms, DC - 6GHz，标准封装
技术参数：Mini-Circuits 射频微波器件
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M3SW-250DRA-D+技术参数详情说明：

The M3SW-250DRA-D+ is a high-performance MMIC SPDT switch from Mini-Circuits, featuring a reflective configuration and 50 Ohms impedance, operating from DC to 4.5 GHz. It incorporates a CMOS driver for low power consumption, making it suitable for compact RF designs where space efficiency is critical.

With typical insertion loss of just 0.6 dB and maximum of 2.5 dB, this switch ensures minimal signal degradation. It delivers excellent linearity with 1 dB compression at 25 dBm and input IP3 of 47.3 dBm, along with high isolation up to 48 dB typical (30 dB min), providing robust performance in high-frequency environments.

制造商产品型号: M3SW-250DRA-D+
制造商: Mini-Circuits
功能类别: MMIC芯片 Switches, Die, SPDT 50 Ohms, DC - 6GHz
Type: SPDT
Freq. Low (GHz): DC
Freq. Hi (GHz): 4.5
Driver: CMOS
Config.: Reflect
Insertion Loss (dB), Typ.: 0.6
Insertion Loss (dB), Max.: 2.5
1 dB Compression (dBm), Typ.: 25
Input IP3 (dBm) Typ.: 47.3
In-Out Isolation (dB), Typ.: 48
In-Out Isolation (dB), Min.: 30
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M3SW-250DRA-D+应用范围：

In communication systems, the M3SW-250DRA-D+ is ideal for base stations and mobile devices, enabling reliable RF signal routing with its SPDT design. Its wide frequency range from DC to 4.5 GHz supports diverse applications like 5G infrastructure, ensuring minimal interference and high data throughput.

For test and measurement equipment, this switch offers precise signal switching in signal generators and analyzers, thanks to its low insertion loss and high isolation. Its die form factor integrates seamlessly into automated test setups, enhancing accuracy in RF performance evaluation and calibration tasks.